[7964stk lager]
- Hlutanúmer:
- IRF6668TR1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 80V 55A DIRECTFET-MZ.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Transistors - Tvíhverfur (BJT) - RF, Transistors - Forritanleg sameining, Díóða - Bríta leiðréttingar, Thyristors - SCR, Thyristors - DIACs, SIDACs, Díóða - Zener - Fylki and Díóða - leiðréttingar - stakir ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRF6668TR1 electronic components. IRF6668TR1 can be shipped within 24 hours after order. If you have any demands for IRF6668TR1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6668TR1 Vörueiginleikar
Hlutanúmer :
IRF6668TR1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 80V 55A DIRECTFET-MZ
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
80V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
55A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
15 mOhm @ 12A, 10V
Vgs (th) (Max) @ kt :
4.9V @ 100µA
Hliðargjald (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1320pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
2.8W (Ta), 89W (Tc)
Vinnuhitastig :
-40°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
DIRECTFET™ MZ
Pakki / mál :
DirectFET™ Isometric MZ
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