RQ3E120GNTB Verðlagning (USD) [609458stk lager]
- 1 pcs$0.06709
- 3,000 pcs$0.06676
- Hlutanúmer:
- RQ3E120GNTB
- Framleiðandi:
- Rohm Semiconductor
- Nákvæm lýsing:
- MOSFET N-CH 30V 12A 8-HSMT.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Díóða - Zener - Fylki, Díóða - breytileg getu, Díóða - leiðréttingar - stakir, Transistors - IGBTs - Single, Transistors - IGBTs - mát, Transistors - Forritanleg sameining and Díóða - leiðréttingar - fylki ...
- Samkeppnisforskot:
- We specialize in Rohm Semiconductor RQ3E120GNTB electronic components. RQ3E120GNTB can be shipped within 24 hours after order. If you have any demands for RQ3E120GNTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQ3E120GNTB Vörueiginleikar
Hlutanúmer :
RQ3E120GNTB
Framleiðandi :
Rohm Semiconductor
Lýsing :
MOSFET N-CH 30V 12A 8-HSMT
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
12A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
8.8 mOhm @ 12A, 10V
Vgs (th) (Max) @ kt :
2.5V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
590pF @ 15V
FET lögun :
-
Dreifing orku (Max) :
2W (Ta), 16W (Tc)
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-HSMT (3.2x3)
Pakki / mál :
8-PowerVDFN
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