DMN2029USD-13 Verðlagning (USD) [530436stk lager]
- 1 pcs$0.06973
- 2,500 pcs$0.06281
- Hlutanúmer:
- DMN2029USD-13
- Framleiðandi:
- Diodes Incorporated
- Nákvæm lýsing:
- MOSFET 2N-CH 20V 5.8A 8SO.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - TRIACs, Díóða - leiðréttingar - fylki, Transistors - IGBTs - mát, Transistors - IGBTs - Arrays, Transistors - sérstök tilgangur, Smára - tvíhverfa (BJT) - fylki, Díóða - Zener - Fylki and Transistors - FETs, MOSFETs - Arrays ...
- Samkeppnisforskot:
- We specialize in Diodes Incorporated DMN2029USD-13 electronic components. DMN2029USD-13 can be shipped within 24 hours after order. If you have any demands for DMN2029USD-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2029USD-13 Vörueiginleikar
Hlutanúmer :
DMN2029USD-13
Framleiðandi :
Diodes Incorporated
Lýsing :
MOSFET 2N-CH 20V 5.8A 8SO
Röð :
-
Hluti staða :
Active
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
5.8A
Rds On (Max) @ Id, Vgs :
25 mOhm @ 6.5A, 4.5V
Vgs (th) (Max) @ kt :
1.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
18.6nC @ 8V
Inntaksrýmd (Ciss) (Max) @ Vds :
1171pF @ 10V
Afl - Max :
1.2W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Birgir tæki pakki :
8-SO
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