SUD35N10-26P-T4GE3 Verðlagning (USD) [84051stk lager]
- 1 pcs$0.46521
- 2,500 pcs$0.43586
- Hlutanúmer:
- SUD35N10-26P-T4GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 100V 35A TO252.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Arrays, Transistors - Tvíhverfur (BJT) - RF, Thyristors - DIACs, SIDACs, Thyristors - TRIACs, Díóða - leiðréttingar - stakir, Transistors - Tvíhverfur (BJT) - Single, Transistors - FETs, MOSFETs - RF and Thyristors - SCRs - mát ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SUD35N10-26P-T4GE3 electronic components. SUD35N10-26P-T4GE3 can be shipped within 24 hours after order. If you have any demands for SUD35N10-26P-T4GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SUD35N10-26P-T4GE3 Vörueiginleikar
Hlutanúmer :
SUD35N10-26P-T4GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 100V 35A TO252
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
35A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
7V, 10V
Rds On (Max) @ Id, Vgs :
26 mOhm @ 12A, 10V
Vgs (th) (Max) @ kt :
4.4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
47nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
2000pF @ 12V
FET lögun :
-
Dreifing orku (Max) :
8.3W (Ta), 83W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
TO-252, (D-Pak)
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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