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- Hlutanúmer:
- IXFT12N100Q
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH 1000V 12A TO268.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - sérstök tilgangur, Thyristors - SCR, Díóða - Zener - Fylki, Transistors - IGBTs - mát, Transistors - FETs, MOSFETs - Arrays, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - IGBTs - Single and Transistors - Tvíhverfur (BJT) - Single ...
- Samkeppnisforskot:
- We specialize in IXYS IXFT12N100Q electronic components. IXFT12N100Q can be shipped within 24 hours after order. If you have any demands for IXFT12N100Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFT12N100Q Vörueiginleikar
Hlutanúmer :
IXFT12N100Q
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH 1000V 12A TO268
Röð :
HiPerFET™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
1000V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
12A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.05 Ohm @ 6A, 10V
Vgs (th) (Max) @ kt :
5.5V @ 4mA
Hliðargjald (Qg) (Max) @ Vgs :
90nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
2900pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
300W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
TO-268
Pakki / mál :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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