SIA811ADJ-T1-GE3 Verðlagning (USD) [431769stk lager]
- 1 pcs$0.08567
- 3,000 pcs$0.08092
- Hlutanúmer:
- SIA811ADJ-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET P-CH 20V 4.5A PPAK SC70-6.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Single, Díóða - breytileg getu, Transistors - FETs, MOSFETs - RF, Díóða - leiðréttingar - stakir, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - IGBTs - Arrays, Díóða - RF and Smára - tvíhverfa (BJT) - fylki, forspeglast ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIA811ADJ-T1-GE3 electronic components. SIA811ADJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA811ADJ-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIA811ADJ-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIA811ADJ-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET P-CH 20V 4.5A PPAK SC70-6
Röð :
LITTLE FOOT®
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4.5A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
1.8V, 4.5V
Rds On (Max) @ Id, Vgs :
116 mOhm @ 2.8A, 4.5V
Vgs (th) (Max) @ kt :
1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
13nC @ 8V
Vgs (hámark) :
±8V
Inntaksrýmd (Ciss) (Max) @ Vds :
345pF @ 10V
FET lögun :
Schottky Diode (Isolated)
Dreifing orku (Max) :
1.8W (Ta), 6.5W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® SC-70-6 Dual
Pakki / mál :
PowerPAK® SC-70-6 Dual
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