Infineon Technologies - IPD25N06S4L30ATMA1

KEY Part #: K6402342

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    Hlutanúmer:
    IPD25N06S4L30ATMA1
    Framleiðandi:
    Infineon Technologies
    Nákvæm lýsing:
    MOSFET N-CH 60V 25A TO252-3.
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    Á lager
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    KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Smára - tvíhverfa (BJT) - fylki, Transistors - Tvíhverfur (BJT) - Single, Transistors - IGBTs - Single, Transistors - Tvíhverfur (BJT) - RF, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf and Thyristors - TRIACs ...
    Samkeppnisforskot:
    We specialize in Infineon Technologies IPD25N06S4L30ATMA1 electronic components. IPD25N06S4L30ATMA1 can be shipped within 24 hours after order. If you have any demands for IPD25N06S4L30ATMA1, Please submit a Request for Quotation here or send us an email:
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    IPD25N06S4L30ATMA1 Vörueiginleikar

    Hlutanúmer : IPD25N06S4L30ATMA1
    Framleiðandi : Infineon Technologies
    Lýsing : MOSFET N-CH 60V 25A TO252-3
    Röð : OptiMOS™
    Hluti staða : Discontinued at Digi-Key
    FET gerð : N-Channel
    Tækni : MOSFET (Metal Oxide)
    Afrennsli að uppspennu (Vdss) : 60V
    Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 25A (Tc)
    Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 30 mOhm @ 25A, 10V
    Vgs (th) (Max) @ kt : 2.2V @ 8µA
    Hliðargjald (Qg) (Max) @ Vgs : 16.3nC @ 10V
    Vgs (hámark) : ±16V
    Inntaksrýmd (Ciss) (Max) @ Vds : 1220pF @ 25V
    FET lögun : -
    Dreifing orku (Max) : 29W (Tc)
    Vinnuhitastig : -55°C ~ 175°C (TJ)
    Festingargerð : Surface Mount
    Birgir tæki pakki : PG-TO252-3-11
    Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63