[3909stk lager]
- Hlutanúmer:
- SI7960DP-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2N-CH 60V 6.2A PPAK SO-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Transistors - sérstök tilgangur, Díóða - breytileg getu, Díóða - leiðréttingar - stakir, Transistors - FETs, MOSFETs - Single, Díóða - leiðréttingar - fylki, Transistors - Tvíhverfur (BJT) - Single and Smára - tvíhverfa (BJT) - fylki, forspeglast ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI7960DP-T1-GE3 electronic components. SI7960DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7960DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7960DP-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI7960DP-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2N-CH 60V 6.2A PPAK SO-8
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
6.2A
Rds On (Max) @ Id, Vgs :
21 mOhm @ 9.7A, 10V
Vgs (th) (Max) @ kt :
3V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
75nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
-
Afl - Max :
1.4W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
PowerPAK® SO-8 Dual
Birgir tæki pakki :
PowerPAK® SO-8 Dual
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