[3453stk lager]
- Hlutanúmer:
- IRFR220,118
- Framleiðandi:
- NXP USA Inc.
- Nákvæm lýsing:
- MOSFET N-CH 200V 4.8A DPAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Bríta leiðréttingar, Thyristors - SCRs - mát, Transistors - JFETs, Díóða - Zener - Fylki, Transistors - Tvíhverfur (BJT) - Single, Transistors - IGBTs - Single, Transistors - IGBTs - mát and Thyristors - TRIACs ...
- Samkeppnisforskot:
- We specialize in NXP USA Inc. IRFR220,118 electronic components. IRFR220,118 can be shipped within 24 hours after order. If you have any demands for IRFR220,118, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFR220,118 Vörueiginleikar
Hlutanúmer :
IRFR220,118
Framleiðandi :
NXP USA Inc.
Lýsing :
MOSFET N-CH 200V 4.8A DPAK
Röð :
TrenchMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4.8A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
800 mOhm @ 2.9A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
14nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
280pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
42W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
DPAK
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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