IRLR3717TRRPBF Verðlagning (USD) [167648stk lager]
- 1 pcs$0.22403
- 3,000 pcs$0.22292
- Hlutanúmer:
- IRLR3717TRRPBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 20V 120A DPAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - breytileg getu, Transistors - IGBTs - mát, Transistors - JFETs, Thyristors - TRIACs, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - IGBTs - Single, Thyristors - SCR and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRLR3717TRRPBF electronic components. IRLR3717TRRPBF can be shipped within 24 hours after order. If you have any demands for IRLR3717TRRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLR3717TRRPBF Vörueiginleikar
Hlutanúmer :
IRLR3717TRRPBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 20V 120A DPAK
Röð :
HEXFET®
Hluti staða :
Not For New Designs
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
120A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4 mOhm @ 15A, 10V
Vgs (th) (Max) @ kt :
2.45V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
31nC @ 4.5V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
2830pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
89W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
D-Pak
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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