SIR826BDP-T1-RE3 Verðlagning (USD) [118801stk lager]
- 1 pcs$0.31134
- Hlutanúmer:
- SIR826BDP-T1-RE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 80V PPAK SO-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - stakir, Transistors - IGBTs - Arrays, Transistors - Forritanleg sameining, Díóða - Bríta leiðréttingar, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Thyristors - TRIACs, Díóða - RF and Transistors - IGBTs - Single ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIR826BDP-T1-RE3 electronic components. SIR826BDP-T1-RE3 can be shipped within 24 hours after order. If you have any demands for SIR826BDP-T1-RE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIR826BDP-T1-RE3 Vörueiginleikar
Hlutanúmer :
SIR826BDP-T1-RE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 80V PPAK SO-8
Röð :
TrenchFET® Gen IV
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
80V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
19.8A (Ta), 80.8A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
7.5V, 10V
Rds On (Max) @ Id, Vgs :
5.1 mOhm @ 15A, 10V
Vgs (th) (Max) @ kt :
3.8V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
69nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
3030pF @ 40V
FET lögun :
-
Dreifing orku (Max) :
5W (Ta), 83W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® SO-8
Pakki / mál :
PowerPAK® SO-8
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