Infineon Technologies - IPB036N12N3GATMA1

KEY Part #: K6417072

IPB036N12N3GATMA1 Verðlagning (USD) [24475stk lager]

  • 1 pcs$1.68394

Hlutanúmer:
IPB036N12N3GATMA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH 120V 180A TO263-7.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - RF, Smára - tvíhverfa (BJT) - fylki, Transistors - IGBTs - mát, Thyristors - TRIACs, Transistors - Tvíhverfur (BJT) - RF, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - FETs, MOSFETs - Arrays and Díóða - leiðréttingar - fylki ...
Samkeppnisforskot:
We specialize in Infineon Technologies IPB036N12N3GATMA1 electronic components. IPB036N12N3GATMA1 can be shipped within 24 hours after order. If you have any demands for IPB036N12N3GATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB036N12N3GATMA1 Vörueiginleikar

Hlutanúmer : IPB036N12N3GATMA1
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH 120V 180A TO263-7
Röð : OptiMOS™
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 120V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 180A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.6 mOhm @ 100A, 10V
Vgs (th) (Max) @ kt : 4V @ 270µA
Hliðargjald (Qg) (Max) @ Vgs : 211nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 13800pF @ 60V
FET lögun : -
Dreifing orku (Max) : 300W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PG-TO263-7
Pakki / mál : TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

Þú gætir líka haft áhuga á
  • ZVN3306A

    Diodes Incorporated

    MOSFET N-CH 60V 270MA TO92-3.

  • FQN1N60CTA

    ON Semiconductor

    MOSFET N-CH 600V 300MA TO-92.

  • TK33S10N1Z,LQ

    Toshiba Semiconductor and Storage

    MOSFET N-CH 100V 33A DPAK.

  • IRFR4105TRPBF

    Infineon Technologies

    MOSFET N-CH 55V 27A DPAK.

  • IRLR3636TRPBF

    Infineon Technologies

    MOSFET N-CH 60V 50A DPAK.

  • FDD4685

    ON Semiconductor

    MOSFET P-CH 40V 8.4A DPAK.