BSC019N06NSATMA1 Verðlagning (USD) [81641stk lager]
- 1 pcs$0.47894
- Hlutanúmer:
- BSC019N06NSATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- DIFFERENTIATED MOSFETS.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - Tvíhverfur (BJT) - Single, Thyristors - TRIACs, Díóða - Bríta leiðréttingar, Kerfisstjóratæki, Díóða - breytileg getu, Díóða - Zener - Fylki and Transistors - IGBTs - mát ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSC019N06NSATMA1 electronic components. BSC019N06NSATMA1 can be shipped within 24 hours after order. If you have any demands for BSC019N06NSATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC019N06NSATMA1 Vörueiginleikar
Hlutanúmer :
BSC019N06NSATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
DIFFERENTIATED MOSFETS
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
100A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
1.95 mOhm @ 50A, 10V
Vgs (th) (Max) @ kt :
3.3V @ 74µA
Hliðargjald (Qg) (Max) @ Vgs :
77nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
5.25nF @ 30V
FET lögun :
-
Dreifing orku (Max) :
136W (Ta)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TDSON-8 FL
Pakki / mál :
8-PowerTDFN
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