SQM120N10-09_GE3 Verðlagning (USD) [50012stk lager]
- 1 pcs$0.78183
- Hlutanúmer:
- SQM120N10-09_GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 100V 120A TO263.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - RF, Díóða - Zener - Fylki, Thyristors - SCR, Transistors - sérstök tilgangur, Díóða - breytileg getu, Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - Zener - Stakur and Transistors - FETs, MOSFETs - Single ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SQM120N10-09_GE3 electronic components. SQM120N10-09_GE3 can be shipped within 24 hours after order. If you have any demands for SQM120N10-09_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQM120N10-09_GE3 Vörueiginleikar
Hlutanúmer :
SQM120N10-09_GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 100V 120A TO263
Röð :
Automotive, AEC-Q101, TrenchFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
120A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
9.5 mOhm @ 30A, 10V
Vgs (th) (Max) @ kt :
3.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
180nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
8645pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
375W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
TO-263 (D²Pak)
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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