[4163stk lager]
- Hlutanúmer:
- IRL6372PBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET 2N-CH 30V 8.1A 8SO.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - RF, Transistors - Forritanleg sameining, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Thyristors - SCR, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs - mát and Díóða - Zener - Fylki ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRL6372PBF electronic components. IRL6372PBF can be shipped within 24 hours after order. If you have any demands for IRL6372PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRL6372PBF Vörueiginleikar
Hlutanúmer :
IRL6372PBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET 2N-CH 30V 8.1A 8SO
Röð :
HEXFET®
Hluti staða :
Discontinued at Digi-Key
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
8.1A
Rds On (Max) @ Id, Vgs :
17.9 mOhm @ 8.1A, 4.5V
Vgs (th) (Max) @ kt :
1.1V @ 10µA
Hliðargjald (Qg) (Max) @ Vgs :
11nC @ 4.5V
Inntaksrýmd (Ciss) (Max) @ Vds :
1020pF @ 25V
Afl - Max :
2W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
Birgir tæki pakki :
8-SO
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