SI4778DY-T1-E3 Verðlagning (USD) [1508stk lager]
- 2,500 pcs$0.11986
- Hlutanúmer:
- SI4778DY-T1-E3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 25V 8A 8-SOIC.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - JFETs, Díóða - Zener - Stakur, Díóða - leiðréttingar - fylki, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - mát, Díóða - Bríta leiðréttingar, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - RF ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI4778DY-T1-E3 electronic components. SI4778DY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4778DY-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4778DY-T1-E3 Vörueiginleikar
Hlutanúmer :
SI4778DY-T1-E3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 25V 8A 8-SOIC
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
25V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
8A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
23 mOhm @ 7A, 10V
Vgs (th) (Max) @ kt :
2.2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs (hámark) :
±16V
Inntaksrýmd (Ciss) (Max) @ Vds :
680pF @ 13V
FET lögun :
-
Dreifing orku (Max) :
2.4W (Ta), 5W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-SO
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
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