[8714stk lager]
- Hlutanúmer:
- SI8416DB-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 8V 16A MICRO.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCRs - mát, Díóða - RF, Transistors - FETs, MOSFETs - RF, Smára - tvíhverfa (BJT) - fylki, Transistors - IGBTs - mát, Thyristors - TRIACs, Thyristors - DIACs, SIDACs and Díóða - leiðréttingar - fylki ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI8416DB-T1-GE3 electronic components. SI8416DB-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI8416DB-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8416DB-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI8416DB-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 8V 16A MICRO
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
8V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
16A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
1.2V, 4.5V
Rds On (Max) @ Id, Vgs :
23 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ kt :
800mV @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
26nC @ 4.5V
Vgs (hámark) :
±5V
Inntaksrýmd (Ciss) (Max) @ Vds :
1470pF @ 4V
FET lögun :
-
Dreifing orku (Max) :
2.77W (Ta), 13W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
6-microfoot
Pakki / mál :
6-UFBGA
Nýjustu fréttir
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