[3464stk lager]
- Hlutanúmer:
- PHK4NQ10T,518
- Framleiðandi:
- NXP USA Inc.
- Nákvæm lýsing:
- MOSFET N-CH 100V SOT96-1.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Single, Díóða - breytileg getu, Smára - tvíhverfa (BJT) - fylki, Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Díóða - leiðréttingar - stakir, Thyristors - TRIACs and Díóða - Zener - Fylki ...
- Samkeppnisforskot:
- We specialize in NXP USA Inc. PHK4NQ10T,518 electronic components. PHK4NQ10T,518 can be shipped within 24 hours after order. If you have any demands for PHK4NQ10T,518, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHK4NQ10T,518 Vörueiginleikar
Hlutanúmer :
PHK4NQ10T,518
Framleiðandi :
NXP USA Inc.
Lýsing :
MOSFET N-CH 100V SOT96-1
Röð :
TrenchMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
-
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
70 mOhm @ 4A, 10V
Vgs (th) (Max) @ kt :
4V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
880pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
2.5W (Ta)
Vinnuhitastig :
-65°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-SO
Pakki / mál :
8-SOIC (0.154", 3.90mm Width)
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