Infineon Technologies - IPD65R190C7ATMA1

KEY Part #: K6418522

IPD65R190C7ATMA1 Verðlagning (USD) [67347stk lager]

  • 1 pcs$0.60913
  • 2,500 pcs$0.60610

Hlutanúmer:
IPD65R190C7ATMA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH 650V 13A TO-252.
Venjulegur framleiðslutími framleiðanda:
Á lager
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Hong Kong
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Fjölskylduflokkar:
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Samkeppnisforskot:
We specialize in Infineon Technologies IPD65R190C7ATMA1 electronic components. IPD65R190C7ATMA1 can be shipped within 24 hours after order. If you have any demands for IPD65R190C7ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD65R190C7ATMA1 Vörueiginleikar

Hlutanúmer : IPD65R190C7ATMA1
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH 650V 13A TO-252
Röð : CoolMOS™ C7
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 13A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 190 mOhm @ 5.7A, 10V
Vgs (th) (Max) @ kt : 4V @ 290µA
Hliðargjald (Qg) (Max) @ Vgs : 23nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 1150pF @ 400V
FET lögun : -
Dreifing orku (Max) : 72W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PG-TO252-3
Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63

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