Toshiba Semiconductor and Storage - TPW1R306PL,L1Q

KEY Part #: K6416465

TPW1R306PL,L1Q Verðlagning (USD) [66799stk lager]

  • 1 pcs$0.59163
  • 5,000 pcs$0.58868

Hlutanúmer:
TPW1R306PL,L1Q
Framleiðandi:
Toshiba Semiconductor and Storage
Nákvæm lýsing:
X35 PB-F POWER MOSFET TRANSISTOR.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Díóða - breytileg getu, Transistors - sérstök tilgangur, Thyristors - TRIACs, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - FETs, MOSFETs - RF, Thyristors - SCR and Díóða - Zener - Stakur ...
Samkeppnisforskot:
We specialize in Toshiba Semiconductor and Storage TPW1R306PL,L1Q electronic components. TPW1R306PL,L1Q can be shipped within 24 hours after order. If you have any demands for TPW1R306PL,L1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPW1R306PL,L1Q Vörueiginleikar

Hlutanúmer : TPW1R306PL,L1Q
Framleiðandi : Toshiba Semiconductor and Storage
Lýsing : X35 PB-F POWER MOSFET TRANSISTOR
Röð : U-MOSIX-H
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 260A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 1.29 mOhm @ 50A, 10V
Vgs (th) (Max) @ kt : 2.5V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs : 91nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 8100pF @ 30V
FET lögun : -
Dreifing orku (Max) : 960mW (Ta), 170W (Tc)
Vinnuhitastig : 175°C
Festingargerð : Surface Mount
Birgir tæki pakki : 8-DSOP Advance
Pakki / mál : 8-PowerVDFN

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