IPB35N10S3L26ATMA1 Verðlagning (USD) [125898stk lager]
- 1 pcs$0.29379
- 1,000 pcs$0.26951
- Hlutanúmer:
- IPB35N10S3L26ATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH TO263-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - JFETs, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - Zener - Stakur, Díóða - leiðréttingar - fylki, Transistors - FETs, MOSFETs - Single, Kerfisstjóratæki, Transistors - FETs, MOSFETs - RF and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPB35N10S3L26ATMA1 electronic components. IPB35N10S3L26ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB35N10S3L26ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB35N10S3L26ATMA1 Vörueiginleikar
Hlutanúmer :
IPB35N10S3L26ATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH TO263-3
Röð :
Automotive, AEC-Q101, OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
35A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
26.3 mOhm @ 35A, 10V
Vgs (th) (Max) @ kt :
2.4V @ 39µA
Hliðargjald (Qg) (Max) @ Vgs :
39nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
2700pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
71W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
D²PAK (TO-263AB)
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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