IXTT10N100D2 Verðlagning (USD) [8899stk lager]
- 1 pcs$5.11938
- 30 pcs$5.09391
- Hlutanúmer:
- IXTT10N100D2
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH 1000V 10A TO-267.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - stakir, Transistors - IGBTs - mát, Thyristors - SCR, Transistors - sérstök tilgangur, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in IXYS IXTT10N100D2 electronic components. IXTT10N100D2 can be shipped within 24 hours after order. If you have any demands for IXTT10N100D2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTT10N100D2 Vörueiginleikar
Hlutanúmer :
IXTT10N100D2
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH 1000V 10A TO-267
Röð :
-
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
1000V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
10A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.5 Ohm @ 5A, 10V
Vgs (th) (Max) @ kt :
-
Hliðargjald (Qg) (Max) @ Vgs :
200nC @ 5V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
5320pF @ 25V
FET lögun :
Depletion Mode
Dreifing orku (Max) :
695W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
TO-268
Pakki / mál :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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