SIA777EDJ-T1-GE3 Verðlagning (USD) [406296stk lager]
- 1 pcs$0.09149
- 3,000 pcs$0.09104
- Hlutanúmer:
- SIA777EDJ-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N/P-CH 20V/12V SC70-6L.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Transistors - JFETs, Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - Zener - Stakur, Kerfisstjóratæki, Díóða - leiðréttingar - stakir, Transistors - IGBTs - Arrays and Thyristors - TRIACs ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIA777EDJ-T1-GE3 electronic components. SIA777EDJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA777EDJ-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIA777EDJ-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIA777EDJ-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N/P-CH 20V/12V SC70-6L
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
N and P-Channel
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
20V, 12V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
1.5A, 4.5A
Rds On (Max) @ Id, Vgs :
225 mOhm @ 1.6A, 4.5V
Vgs (th) (Max) @ kt :
1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
2.2nC @ 5V
Inntaksrýmd (Ciss) (Max) @ Vds :
-
Afl - Max :
5W, 7.8W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
PowerPAK® SC-70-6 Dual
Birgir tæki pakki :
PowerPAK® SC-70-6 Dual
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