[96stk lager]
- Hlutanúmer:
- BSP149 E6327
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 200V 660MA SOT-223.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - Forritanleg sameining, Transistors - IGBTs - Single, Transistors - JFETs, Thyristors - SCRs - mát, Transistors - sérstök tilgangur, Thyristors - SCR and Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies BSP149 E6327 electronic components. BSP149 E6327 can be shipped within 24 hours after order. If you have any demands for BSP149 E6327, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSP149 E6327 Vörueiginleikar
Hlutanúmer :
BSP149 E6327
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 200V 660MA SOT-223
Röð :
SIPMOS®
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
660mA (Ta)
Drifspenna (Max Rds On, Min Rds On) :
0V, 10V
Rds On (Max) @ Id, Vgs :
1.8 Ohm @ 660mA, 10V
Vgs (th) (Max) @ kt :
1V @ 400µA
Hliðargjald (Qg) (Max) @ Vgs :
14nC @ 5V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
430pF @ 25V
FET lögun :
Depletion Mode
Dreifing orku (Max) :
1.8W (Ta)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-SOT223-4
Pakki / mál :
TO-261-4, TO-261AA
Nýjustu fréttir
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