RN1703JE(TE85L,F) Verðlagning (USD) [1060332stk lager]
- 1 pcs$0.03488
- Hlutanúmer:
- RN1703JE(TE85L,F)
- Framleiðandi:
- Toshiba Semiconductor and Storage
- Nákvæm lýsing:
- TRANS 2NPN PREBIAS 0.1W ESV.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Zener - Fylki, Díóða - leiðréttingar - fylki, Transistors - Tvíhverfur (BJT) - Single, Transistors - IGBTs - mát, Díóða - leiðréttingar - stakir, Thyristors - DIACs, SIDACs, Díóða - breytileg getu and Transistors - JFETs ...
- Samkeppnisforskot:
- We specialize in Toshiba Semiconductor and Storage RN1703JE(TE85L,F) electronic components. RN1703JE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN1703JE(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN1703JE(TE85L,F) Vörueiginleikar
Hlutanúmer :
RN1703JE(TE85L,F)
Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
TRANS 2NPN PREBIAS 0.1W ESV
Röð :
-
Hluti staða :
Active
Transistor Type :
2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Núverandi - Safnari (Ic) (Max) :
100mA
Spenna - sundurliðun útsendara (hámark) :
50V
Viðnám - stöð (R1) :
22 kOhms
Viðnám - Emitter Base (R2) :
22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Núverandi - Úrskurður safnara (Max) :
100nA (ICBO)
Tíðni - umskipti :
250MHz
Afl - Max :
100mW
Festingargerð :
Surface Mount
Pakki / mál :
SOT-553
Birgir tæki pakki :
ESV
Nýjustu fréttir
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