Infineon Technologies - IPB65R190C6ATMA1

KEY Part #: K6404576

IPB65R190C6ATMA1 Verðlagning (USD) [1963stk lager]

  • 1,000 pcs$0.67452

Hlutanúmer:
IPB65R190C6ATMA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH 650V 20.2A TO263.
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KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - leiðréttingar - stakir, Díóða - breytileg getu, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Arrays, Díóða - leiðréttingar - fylki, Transistors - JFETs and Transistors - FETs, MOSFETs - Single ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB65R190C6ATMA1 Vörueiginleikar

Hlutanúmer : IPB65R190C6ATMA1
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH 650V 20.2A TO263
Röð : CoolMOS™
Hluti staða : Obsolete
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 20.2A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 190 mOhm @ 7.3A, 10V
Vgs (th) (Max) @ kt : 3.5V @ 730µA
Hliðargjald (Qg) (Max) @ Vgs : 73nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 1620pF @ 100V
FET lögun : -
Dreifing orku (Max) : 151W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : D²PAK (TO-263AB)
Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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