SPB08P06PGATMA1 Verðlagning (USD) [205360stk lager]
- 1 pcs$0.18011
- 1,000 pcs$0.17293
- Hlutanúmer:
- SPB08P06PGATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET P-CH 60V 8.8A TO-263.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - SCR, Díóða - Zener - Stakur, Transistors - sérstök tilgangur, Díóða - breytileg getu, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Kerfisstjóratæki, Díóða - RF and Smára - tvíhverfa (BJT) - fylki ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies SPB08P06PGATMA1 electronic components. SPB08P06PGATMA1 can be shipped within 24 hours after order. If you have any demands for SPB08P06PGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPB08P06PGATMA1 Vörueiginleikar
Hlutanúmer :
SPB08P06PGATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET P-CH 60V 8.8A TO-263
Röð :
SIPMOS®
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
8.8A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
300 mOhm @ 6.2A, 10V
Vgs (th) (Max) @ kt :
4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
420pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
42W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
D²PAK (TO-263AB)
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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