Framleiðandi :
Diodes Incorporated
Lýsing :
MOSFET N/P-CH 30V 2.9A/2.1A 8DFN
FET gerð :
N and P-Channel
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
2.9A, 2.1A
Rds On (Max) @ Id, Vgs :
120 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ kt :
3V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
3.9nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
190pF @ 25V
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-WDFN Exposed Pad
Birgir tæki pakki :
8-DFN (3x2)