[3944stk lager]
- Hlutanúmer:
- SI1988DH-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2N-CH 20V 1.3A SC-70-6.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - fylki, Thyristors - SCR, Transistors - IGBTs - Single, Díóða - Zener - Stakur, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - FETs, MOSFETs - Single, Thyristors - SCRs - mát and Transistors - Forritanleg sameining ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI1988DH-T1-GE3 electronic components. SI1988DH-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1988DH-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1988DH-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI1988DH-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2N-CH 20V 1.3A SC-70-6
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
1.3A
Rds On (Max) @ Id, Vgs :
168 mOhm @ 1.4A, 4.5V
Vgs (th) (Max) @ kt :
1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
4.1nC @ 8V
Inntaksrýmd (Ciss) (Max) @ Vds :
110pF @ 10V
Afl - Max :
1.25W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
6-TSSOP, SC-88, SOT-363
Birgir tæki pakki :
SC-70-6 (SOT-363)
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