[13342stk lager]
- Hlutanúmer:
- NP36P06KDG-E1-AY
- Framleiðandi:
- Renesas Electronics America
- Nákvæm lýsing:
- MOSFET P-CH 60V 36A TO-263.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - JFETs, Transistors - IGBTs - mát, Thyristors - TRIACs, Transistors - sérstök tilgangur, Transistors - Tvíhverfur (BJT) - Single, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Díóða - breytileg getu and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in Renesas Electronics America NP36P06KDG-E1-AY electronic components. NP36P06KDG-E1-AY can be shipped within 24 hours after order. If you have any demands for NP36P06KDG-E1-AY, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NP36P06KDG-E1-AY Vörueiginleikar
Hlutanúmer :
NP36P06KDG-E1-AY
Framleiðandi :
Renesas Electronics America
Lýsing :
MOSFET P-CH 60V 36A TO-263
Röð :
-
Hluti staða :
Active
FET gerð :
P-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
60V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
36A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
29.5 mOhm @ 18A, 10V
Vgs (th) (Max) @ kt :
2.5V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
54nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
3100pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
1.8W (Ta), 56W (Tc)
Vinnuhitastig :
175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
TO-263
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Nýjustu fréttir
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