Framleiðandi :
Rohm Semiconductor
Lýsing :
MOSFET N-CH 650V 29A TO-220AB
Tækni :
SiCFET (Silicon Carbide)
Afrennsli að uppspennu (Vdss) :
650V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
29A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
156 mOhm @ 10A, 18V
Vgs (th) (Max) @ kt :
4V @ 3.3mA
Hliðargjald (Qg) (Max) @ Vgs :
61nC @ 18V
Inntaksrýmd (Ciss) (Max) @ Vds :
1200pF @ 500V
Dreifing orku (Max) :
165W (Tc)
Vinnuhitastig :
175°C (TJ)
Festingargerð :
Through Hole
Birgir tæki pakki :
TO-220AB