IPB048N15N5LFATMA1 Verðlagning (USD) [20132stk lager]
- 1 pcs$2.04715
- 1,000 pcs$1.71241
- Hlutanúmer:
- IPB048N15N5LFATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 150V 120A TO263-3.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Thyristors - SCR, Transistors - FETs, MOSFETs - Arrays, Díóða - Zener - Stakur, Transistors - Forritanleg sameining, Transistors - FETs, MOSFETs - RF, Transistors - Tvíhverfur (BJT) - Single and Díóða - Bríta leiðréttingar ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPB048N15N5LFATMA1 electronic components. IPB048N15N5LFATMA1 can be shipped within 24 hours after order. If you have any demands for IPB048N15N5LFATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB048N15N5LFATMA1 Vörueiginleikar
Hlutanúmer :
IPB048N15N5LFATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 150V 120A TO263-3
Röð :
OptiMOS™-5
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
150V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
120A
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4.8 mOhm @ 100A, 10V
Vgs (th) (Max) @ kt :
4.9V @ 255µA
Hliðargjald (Qg) (Max) @ Vgs :
84nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
380pF @ 75V
FET lögun :
-
Dreifing orku (Max) :
313W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
D²PAK (TO-263AB)
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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