[4153stk lager]
- Hlutanúmer:
- SI5511DC-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N/P-CH 30V 4A 1206-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Kerfisstjóratæki, Thyristors - SCR, Transistors - Tvíhverfur (BJT) - Single, Díóða - leiðréttingar - fylki, Thyristors - DIACs, SIDACs, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - FETs, MOSFETs - RF and Díóða - Bríta leiðréttingar ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI5511DC-T1-GE3 electronic components. SI5511DC-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5511DC-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5511DC-T1-GE3 Vörueiginleikar
Hlutanúmer :
SI5511DC-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N/P-CH 30V 4A 1206-8
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
N and P-Channel
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4A, 3.6A
Rds On (Max) @ Id, Vgs :
55 mOhm @ 4.8A, 4.5V
Vgs (th) (Max) @ kt :
2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
7.1nC @ 5V
Inntaksrýmd (Ciss) (Max) @ Vds :
435pF @ 15V
Afl - Max :
3.1W, 2.6W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-SMD, Flat Lead
Birgir tæki pakki :
1206-8 ChipFET™
Nýjustu fréttir
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