Infineon Technologies - IAUT260N10S5N019ATMA1

KEY Part #: K6417493

IAUT260N10S5N019ATMA1 Verðlagning (USD) [32560stk lager]

  • 1 pcs$1.26576

Hlutanúmer:
IAUT260N10S5N019ATMA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET75V120V.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
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Samkeppnisforskot:
We specialize in Infineon Technologies IAUT260N10S5N019ATMA1 electronic components. IAUT260N10S5N019ATMA1 can be shipped within 24 hours after order. If you have any demands for IAUT260N10S5N019ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IAUT260N10S5N019ATMA1 Vörueiginleikar

Hlutanúmer : IAUT260N10S5N019ATMA1
Framleiðandi : Infineon Technologies
Lýsing : MOSFET75V120V
Röð : OptiMOS™-5
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 260A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 1.9 mOhm @ 100A, 10V
Vgs (th) (Max) @ kt : 3.8V @ 210µA
Hliðargjald (Qg) (Max) @ Vgs : 166nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 11830pF @ 50V
FET lögun : -
Dreifing orku (Max) : 300W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : PG-HSOF-8-1
Pakki / mál : 8-PowerSFN

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