Vishay Siliconix - SQD40N10-25_GE3

KEY Part #: K6402043

SQD40N10-25_GE3 Verðlagning (USD) [27658stk lager]

  • 1 pcs$1.49007
  • 2,000 pcs$1.34107

Hlutanúmer:
SQD40N10-25_GE3
Framleiðandi:
Vishay Siliconix
Nákvæm lýsing:
MOSFET N-CH 100V 40A TO252.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - Single, Thyristors - SCR, Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - leiðréttingar - stakir, Thyristors - DIACs, SIDACs, Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf, Transistors - IGBTs - mát and Kerfisstjóratæki ...
Samkeppnisforskot:
We specialize in Vishay Siliconix SQD40N10-25_GE3 electronic components. SQD40N10-25_GE3 can be shipped within 24 hours after order. If you have any demands for SQD40N10-25_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQD40N10-25_GE3 Vörueiginleikar

Hlutanúmer : SQD40N10-25_GE3
Framleiðandi : Vishay Siliconix
Lýsing : MOSFET N-CH 100V 40A TO252
Röð : TrenchFET®
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 40A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 40A, 10V
Vgs (th) (Max) @ kt : 2.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 70nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 3380pF @ 25V
FET lögun : -
Dreifing orku (Max) : 136W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : TO-252, (D-Pak)
Pakki / mál : TO-252-3, DPak (2 Leads + Tab), SC-63

Þú gætir líka haft áhuga á
  • VN0109N3-G

    Microchip Technology

    MOSFET N-CH 90V 0.35A TO92-3.

  • ZVN3310ASTZ

    Diodes Incorporated

    MOSFET N-CH 100V 200MA TO92-3.

  • BS107PSTZ

    Diodes Incorporated

    MOSFET N-CH 200V 0.12A TO92-3.

  • ZVN2106ASTZ

    Diodes Incorporated

    MOSFET N-CH 60V 0.45A TO92-3.

  • LND150N3-G-P003

    Microchip Technology

    MOSFET N-CH 500V 30MA TO92-3.

  • ZVN2110ASTZ

    Diodes Incorporated

    MOSFET N-CH 100V 320MA TO92-3.