[1114stk lager]
- Hlutanúmer:
- IXFN100N10S1
- Framleiðandi:
- IXYS
- Nákvæm lýsing:
- MOSFET N-CH 100V 100A SOT-227B.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - Bríta leiðréttingar, Transistors - Tvíhverfur (BJT) - Single, Smára - tvíhverfa (BJT) - fylki, forspeglast, Thyristors - TRIACs, Transistors - Forritanleg sameining, Díóða - RF, Transistors - IGBTs - Arrays and Kerfisstjóratæki ...
- Samkeppnisforskot:
- We specialize in IXYS IXFN100N10S1 electronic components. IXFN100N10S1 can be shipped within 24 hours after order. If you have any demands for IXFN100N10S1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFN100N10S1 Vörueiginleikar
Hlutanúmer :
IXFN100N10S1
Framleiðandi :
IXYS
Lýsing :
MOSFET N-CH 100V 100A SOT-227B
Röð :
HiPerFET™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
100A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
15 mOhm @ 500mA, 10V
Vgs (th) (Max) @ kt :
4V @ 4mA
Hliðargjald (Qg) (Max) @ Vgs :
180nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
4500pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
360W (Tc)
Vinnuhitastig :
-40°C ~ 150°C (TJ)
Festingargerð :
Chassis Mount
Birgir tæki pakki :
SOT-227B
Pakki / mál :
SOT-227-4, miniBLOC
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