[4054stk lager]
- Hlutanúmer:
- PMDPB56XN,115
- Framleiðandi:
- NXP USA Inc.
- Nákvæm lýsing:
- MOSFET 2N-CH 30V 3.1A HUSON6.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Arrays, Díóða - RF, Transistors - Tvíhverfur (BJT) - RF, Thyristors - DIACs, SIDACs, Díóða - Zener - Fylki, Díóða - breytileg getu, Díóða - Bríta leiðréttingar and Transistors - IGBTs - Single ...
- Samkeppnisforskot:
- We specialize in NXP USA Inc. PMDPB56XN,115 electronic components. PMDPB56XN,115 can be shipped within 24 hours after order. If you have any demands for PMDPB56XN,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMDPB56XN,115 Vörueiginleikar
Hlutanúmer :
PMDPB56XN,115
Framleiðandi :
NXP USA Inc.
Lýsing :
MOSFET 2N-CH 30V 3.1A HUSON6
Röð :
-
Hluti staða :
Obsolete
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
3.1A
Rds On (Max) @ Id, Vgs :
73 mOhm @ 3.1A, 4.5V
Vgs (th) (Max) @ kt :
1.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
2.9nC @ 4.5V
Inntaksrýmd (Ciss) (Max) @ Vds :
170pF @ 15V
Afl - Max :
510mW
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
6-UDFN Exposed Pad
Birgir tæki pakki :
DFN2020-6
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