SIR410DP-T1-GE3 Verðlagning (USD) [195896stk lager]
- 1 pcs$0.18976
- 3,000 pcs$0.18881
- Hlutanúmer:
- SIR410DP-T1-GE3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET N-CH 20V 35A PPAK SO-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - mát, Transistors - sérstök tilgangur, Thyristors - TRIACs, Transistors - JFETs, Smára - tvíhverfa (BJT) - fylki, forspeglast, Thyristors - SCRs - mát and Transistors - Forritanleg sameining ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SIR410DP-T1-GE3 electronic components. SIR410DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIR410DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIR410DP-T1-GE3 Vörueiginleikar
Hlutanúmer :
SIR410DP-T1-GE3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET N-CH 20V 35A PPAK SO-8
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
20V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
35A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
4.8 mOhm @ 20A, 10V
Vgs (th) (Max) @ kt :
2.5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
41nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
1600pF @ 10V
FET lögun :
-
Dreifing orku (Max) :
4.2W (Ta), 36W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PowerPAK® SO-8
Pakki / mál :
PowerPAK® SO-8
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