FQD1N80TM Verðlagning (USD) [264835stk lager]
- 1 pcs$0.13966
- 2,500 pcs$0.13556
- Hlutanúmer:
- FQD1N80TM
- Framleiðandi:
- ON Semiconductor
- Nákvæm lýsing:
- MOSFET N-CH 800V 1A DPAK.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - Single, Transistors - IGBTs - mát, Thyristors - SCRs - mát, Kerfisstjóratæki, Díóða - Zener - Fylki, Transistors - JFETs, Díóða - Bríta leiðréttingar and Díóða - RF ...
- Samkeppnisforskot:
- We specialize in ON Semiconductor FQD1N80TM electronic components. FQD1N80TM can be shipped within 24 hours after order. If you have any demands for FQD1N80TM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQD1N80TM Vörueiginleikar
Hlutanúmer :
FQD1N80TM
Framleiðandi :
ON Semiconductor
Lýsing :
MOSFET N-CH 800V 1A DPAK
Röð :
QFET®
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
800V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
1A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
20 Ohm @ 500mA, 10V
Vgs (th) (Max) @ kt :
5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
7.2nC @ 10V
Vgs (hámark) :
±30V
Inntaksrýmd (Ciss) (Max) @ Vds :
195pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
2.5W (Ta), 45W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
D-Pak
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63
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