SI1965DH-T1-E3 Verðlagning (USD) [471021stk lager]
- 1 pcs$0.07853
- 3,000 pcs$0.07418
- Hlutanúmer:
- SI1965DH-T1-E3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2P-CH 12V 1.3A SC70-6.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - FETs, MOSFETs - Arrays, Transistors - Tvíhverfur (BJT) - Single, Transistors - JFETs, Smára - tvíhverfa (BJT) - fylki, Transistors - Tvíhverfur (BJT) - RF, Díóða - Zener - Fylki and Transistors - Tvíhverfur (BJT) - Einstakir, fyrirf ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI1965DH-T1-E3 electronic components. SI1965DH-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI1965DH-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1965DH-T1-E3 Vörueiginleikar
Hlutanúmer :
SI1965DH-T1-E3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2P-CH 12V 1.3A SC70-6
Röð :
TrenchFET®
Hluti staða :
Active
FET gerð :
2 P-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
12V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
1.3A
Rds On (Max) @ Id, Vgs :
390 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ kt :
1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
4.2nC @ 8V
Inntaksrýmd (Ciss) (Max) @ Vds :
120pF @ 6V
Afl - Max :
1.25W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
6-TSSOP, SC-88, SOT-363
Birgir tæki pakki :
SC-70-6 (SOT-363)
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