[3466stk lager]
- Hlutanúmer:
- PHM30NQ10T,518
- Framleiðandi:
- NXP USA Inc.
- Nákvæm lýsing:
- MOSFET N-CH 100V 37.6A 8HVSON.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - Tvíhverfur (BJT) - RF, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - JFETs, Thyristors - SCR, Thyristors - DIACs, SIDACs, Díóða - RF, Díóða - Zener - Fylki and Thyristors - TRIACs ...
- Samkeppnisforskot:
- We specialize in NXP USA Inc. PHM30NQ10T,518 electronic components. PHM30NQ10T,518 can be shipped within 24 hours after order. If you have any demands for PHM30NQ10T,518, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PHM30NQ10T,518 Vörueiginleikar
Hlutanúmer :
PHM30NQ10T,518
Framleiðandi :
NXP USA Inc.
Lýsing :
MOSFET N-CH 100V 37.6A 8HVSON
Röð :
TrenchMOS™
Hluti staða :
Obsolete
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
37.6A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
20 mOhm @ 18A, 10V
Vgs (th) (Max) @ kt :
4V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
53.7nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
3600pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
62.5W (Tc)
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
8-HVSON (6x5)
Pakki / mál :
8-VDFN Exposed Pad
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