Framleiðandi :
Toshiba Semiconductor and Storage
Lýsing :
MOSFET N CH 600V 5.4A DPAK
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
5.4A (Ta)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
900 mOhm @ 2.7A, 10V
Vgs (th) (Max) @ kt :
3.7V @ 270µA
Hliðargjald (Qg) (Max) @ Vgs :
10.5nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
380pF @ 300V
FET lögun :
Super Junction
Dreifing orku (Max) :
60W (Tc)
Vinnuhitastig :
150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
TO-252-3, DPak (2 Leads + Tab), SC-63