[4005stk lager]
- Hlutanúmer:
- IRFHM8363TR2PBF
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET 2N-CH 30V 11A 8PQFN.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Díóða - leiðréttingar - fylki, Transistors - FETs, MOSFETs - RF, Thyristors - SCR, Díóða - Bríta leiðréttingar, Smára - tvíhverfa (BJT) - fylki, forspeglast, Transistors - Forritanleg sameining, Díóða - leiðréttingar - stakir and Transistors - IGBTs - mát ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IRFHM8363TR2PBF electronic components. IRFHM8363TR2PBF can be shipped within 24 hours after order. If you have any demands for IRFHM8363TR2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFHM8363TR2PBF Vörueiginleikar
Hlutanúmer :
IRFHM8363TR2PBF
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET 2N-CH 30V 11A 8PQFN
Röð :
HEXFET®
Hluti staða :
Obsolete
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
11A
Rds On (Max) @ Id, Vgs :
14.9 mOhm @ 10A, 10V
Vgs (th) (Max) @ kt :
2.35V @ 25µA
Hliðargjald (Qg) (Max) @ Vgs :
15nC @ 10V
Inntaksrýmd (Ciss) (Max) @ Vds :
1165pF @ 10V
Afl - Max :
2.7W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-PowerVDFN
Birgir tæki pakki :
8-PQFN (3.3x3.3), Power33
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