IPB100N04S4H2ATMA1 Verðlagning (USD) [110838stk lager]
- 1 pcs$0.33371
- 1,000 pcs$0.31670
- Hlutanúmer:
- IPB100N04S4H2ATMA1
- Framleiðandi:
- Infineon Technologies
- Nákvæm lýsing:
- MOSFET N-CH 40V 100A TO263-3-2.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Díóða - Zener - Fylki, Transistors - FETs, MOSFETs - Single, Díóða - Zener - Stakur, Transistors - Tvíhverfur (BJT) - Single, Transistors - sérstök tilgangur and Kerfisstjóratæki ...
- Samkeppnisforskot:
- We specialize in Infineon Technologies IPB100N04S4H2ATMA1 electronic components. IPB100N04S4H2ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB100N04S4H2ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB100N04S4H2ATMA1 Vörueiginleikar
Hlutanúmer :
IPB100N04S4H2ATMA1
Framleiðandi :
Infineon Technologies
Lýsing :
MOSFET N-CH 40V 100A TO263-3-2
Röð :
OptiMOS™
Hluti staða :
Active
FET gerð :
N-Channel
Tækni :
MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) :
40V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
100A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
2.4 mOhm @ 100A, 10V
Vgs (th) (Max) @ kt :
4V @ 70µA
Hliðargjald (Qg) (Max) @ Vgs :
90nC @ 10V
Vgs (hámark) :
±20V
Inntaksrýmd (Ciss) (Max) @ Vds :
7180pF @ 25V
FET lögun :
-
Dreifing orku (Max) :
115W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Surface Mount
Birgir tæki pakki :
PG-TO263-3-2
Pakki / mál :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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