Vishay Siliconix - SIHW33N60E-GE3

KEY Part #: K6416139

SIHW33N60E-GE3 Verðlagning (USD) [12655stk lager]

  • 1 pcs$3.25677
  • 10 pcs$2.90862

Hlutanúmer:
SIHW33N60E-GE3
Framleiðandi:
Vishay Siliconix
Nákvæm lýsing:
MOSFET N-CH 600V 33A TO-247AD.
Venjulegur framleiðslutími framleiðanda:
Á lager
Geymsluþol:
Eitt ár
Flís frá:
Hong Kong
RoHS:
Greiðslumáti:
Sendingarleið:
Fjölskylduflokkar:
KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Kerfisstjóratæki, Transistors - IGBTs - Arrays, Transistors - Forritanleg sameining, Díóða - Bríta leiðréttingar, Transistors - sérstök tilgangur, Díóða - Zener - Stakur, Transistors - IGBTs - mát and Transistors - IGBTs - Single ...
Samkeppnisforskot:
We specialize in Vishay Siliconix SIHW33N60E-GE3 electronic components. SIHW33N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHW33N60E-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHW33N60E-GE3 Vörueiginleikar

Hlutanúmer : SIHW33N60E-GE3
Framleiðandi : Vishay Siliconix
Lýsing : MOSFET N-CH 600V 33A TO-247AD
Röð : -
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 600V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 33A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 99 mOhm @ 16.5A, 10V
Vgs (th) (Max) @ kt : 4V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 150nC @ 10V
Vgs (hámark) : ±30V
Inntaksrýmd (Ciss) (Max) @ Vds : 3508pF @ 100V
FET lögun : -
Dreifing orku (Max) : 278W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Through Hole
Birgir tæki pakki : TO-247AD
Pakki / mál : TO-3P-3 Full Pack

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