Lýsing :
GAN TRANS SYMMETRICAL HALF BRIDG
FET gerð :
2 N-Channel (Half Bridge)
FET lögun :
GaNFET (Gallium Nitride)
Afrennsli að uppspennu (Vdss) :
100V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
23A
Rds On (Max) @ Id, Vgs :
6.3 mOhm @ 20A, 5V
Vgs (th) (Max) @ kt :
2.5V @ 5.5mA
Hliðargjald (Qg) (Max) @ Vgs :
7nC @ 5V
Inntaksrýmd (Ciss) (Max) @ Vds :
800pF @ 50V
Vinnuhitastig :
-40°C ~ 150°C (TJ)
Festingargerð :
Surface Mount