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Ef staðsetning þín er ekki skráð skaltu velja eitt af eftirfarandi:

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  5. FQI7N80TU

ON Semiconductor - FQI7N80TU

KEY Part #: K6399818

FQI7N80TU Verðlagning (USD) [72314stk lager]

  • 1 pcs$0.54340
  • 1,000 pcs$0.54070
Hlutanúmer:
FQI7N80TU
Framleiðandi:
ON Semiconductor
Nákvæm lýsing:
MOSFET N-CH 800V 6.6A I2PAK.
Venjulegur framleiðslutími framleiðanda:
Á lager
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Flís frá:
Hong Kong
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KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Thyristors - DIACs, SIDACs, Smára - tvíhverfa (BJT) - fylki, forspeglast, Thyristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Transistors - Tvíhverfur (BJT) - RF, Transistors - sérstök tilgangur, Transistors - Forritanleg sameining and Transistors - FETs, MOSFETs - Single ...
Samkeppnisforskot:
We specialize in ON Semiconductor FQI7N80TU electronic components. FQI7N80TU can be shipped within 24 hours after order. If you have any demands for FQI7N80TU, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FQI7N80TU Vörueiginleikar

Hlutanúmer : FQI7N80TU
Framleiðandi : ON Semiconductor
Lýsing : MOSFET N-CH 800V 6.6A I2PAK
Röð : QFET®
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 800V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 6.6A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.5 Ohm @ 3.3A, 10V
Vgs (th) (Max) @ kt : 5V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 52nC @ 10V
Vgs (hámark) : ±30V
Inntaksrýmd (Ciss) (Max) @ Vds : 1850pF @ 25V
FET lögun : -
Dreifing orku (Max) : 3.13W (Ta), 167W (Tc)
Vinnuhitastig : -55°C ~ 150°C (TJ)
Festingargerð : Through Hole
Birgir tæki pakki : I2PAK (TO-262)
Pakki / mál : TO-262-3 Long Leads, I²Pak, TO-262AA

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