[3842stk lager]
- Hlutanúmer:
- SI5920DC-T1-E3
- Framleiðandi:
- Vishay Siliconix
- Nákvæm lýsing:
- MOSFET 2N-CH 8V 4A 1206-8.
- Venjulegur framleiðslutími framleiðanda:
- Á lager
- Geymsluþol:
- Eitt ár
- Flís frá:
- Hong Kong
- RoHS:
- Greiðslumáti:
-
- Sendingarleið:
- Fjölskylduflokkar:
- KEY Components Co, LTD er rafeindabúnaður dreifingaraðili sem býður upp á vöruflokka þar á meðal: Transistors - IGBTs - mát, Smára - tvíhverfa (BJT) - fylki, forspeglast, Díóða - breytileg getu, Transistors - IGBTs - Arrays, Thyristors - TRIACs, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single and Smára - tvíhverfa (BJT) - fylki ...
- Samkeppnisforskot:
- We specialize in Vishay Siliconix SI5920DC-T1-E3 electronic components. SI5920DC-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI5920DC-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5920DC-T1-E3 Vörueiginleikar
Hlutanúmer :
SI5920DC-T1-E3
Framleiðandi :
Vishay Siliconix
Lýsing :
MOSFET 2N-CH 8V 4A 1206-8
Röð :
TrenchFET®
Hluti staða :
Obsolete
FET gerð :
2 N-Channel (Dual)
FET lögun :
Logic Level Gate
Afrennsli að uppspennu (Vdss) :
8V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
4A
Rds On (Max) @ Id, Vgs :
32 mOhm @ 6.8A, 4.5V
Vgs (th) (Max) @ kt :
1V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs :
12nC @ 5V
Inntaksrýmd (Ciss) (Max) @ Vds :
680pF @ 4V
Afl - Max :
3.12W
Vinnuhitastig :
-55°C ~ 150°C (TJ)
Festingargerð :
Surface Mount
Pakki / mál :
8-SMD, Flat Lead
Birgir tæki pakki :
1206-8 ChipFET™
Nýjustu fréttir
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