Infineon Technologies - IPB065N03LGATMA1

KEY Part #: K6416553

IPB065N03LGATMA1 Verðlagning (USD) [152979stk lager]

  • 1 pcs$0.24178

Hlutanúmer:
IPB065N03LGATMA1
Framleiðandi:
Infineon Technologies
Nákvæm lýsing:
MOSFET N-CH 30V 50A TO-263-3.
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Á lager
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Hong Kong
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Samkeppnisforskot:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB065N03LGATMA1 Vörueiginleikar

Hlutanúmer : IPB065N03LGATMA1
Framleiðandi : Infineon Technologies
Lýsing : MOSFET N-CH 30V 50A TO-263-3
Röð : OptiMOS™
Hluti staða : Active
FET gerð : N-Channel
Tækni : MOSFET (Metal Oxide)
Afrennsli að uppspennu (Vdss) : 30V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C : 50A (Tc)
Drifspenna (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 6.5 mOhm @ 30A, 10V
Vgs (th) (Max) @ kt : 2.2V @ 250µA
Hliðargjald (Qg) (Max) @ Vgs : 23nC @ 10V
Vgs (hámark) : ±20V
Inntaksrýmd (Ciss) (Max) @ Vds : 2400pF @ 15V
FET lögun : -
Dreifing orku (Max) : 56W (Tc)
Vinnuhitastig : -55°C ~ 175°C (TJ)
Festingargerð : Surface Mount
Birgir tæki pakki : D²PAK (TO-263AB)
Pakki / mál : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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