Framleiðandi :
Microsemi Corporation
Lýsing :
POWER MOSFET - SIC
Tækni :
SiCFET (Silicon Carbide)
Afrennsli að uppspennu (Vdss) :
1200V
Straumur - Stöðugur frárennsli (auðkenni) við 25 ° C :
25A (Tc)
Drifspenna (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
175 mOhm @ 10A, 20V
Vgs (th) (Max) @ kt :
2.5V @ 1mA
Hliðargjald (Qg) (Max) @ Vgs :
72nC @ 20V
Inntaksrýmd (Ciss) (Max) @ Vds :
-
Dreifing orku (Max) :
175W (Tc)
Vinnuhitastig :
-55°C ~ 175°C (TJ)
Festingargerð :
Chassis Mount